F1066 datasheet

Electronic component partname: F1066

F1066 description: 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Manufacturer: POFET

Temperature range: Min: -65°C | Max: 150°C

Chip package & pins: Not available... (Pins: 8)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

F1066 datasheet size: 39Kb

Download F1066 datasheet: F1066.PDF