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F2211 datasheet



datasheet for F2211 by   Electronic component partname: F2211

F2211 description: 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Manufacturer: POFET

Temperature range: Min: -65°C | Max: 150°C

Chip package & pins: Not available... (Pins: 4)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

F2211 datasheet size: 35Kb

Download F2211 datasheet: F2211.PDF


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