F2248 datasheet

Electronic component partname: F2248

F2248 description: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Manufacturer: POFET

Temperature range: Min: -65°C | Max: 150°C

Chip package & pins: Not available... (Pins: 6)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

F2248 datasheet size: 35Kb

Download F2248 datasheet: F2248.PDF