L8821P datasheet

Electronic component partname: L8821P

L8821P description: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor

Manufacturer: POFET

Temperature range: Min: -65°C | Max: 150°C

Chip package & pins: SO-8 (Pins: 8)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

L8821P datasheet size: 40Kb

Download L8821P datasheet: L8821P.PDF