BD241 datasheet

Electronic component partname: BD241

BD241 description: 4mW NPN silicon epitaxial base power transistor

Manufacturer: ME

Temperature range: Min: -55°C | Max: 150°C

Chip package & pins: TO-220B (Pins: 3)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

BD241 datasheet size: 97Kb

Download BD241 datasheet: BD241.PDF