PHD2N60E datasheet

datasheet for PHD2N60E by Philips Semiconductors

Electronic component partname: PHD2N60E

PHD2N60E description: 600 V, power MOS transistor avalanche energy rated

Manufacturer: Philips Semiconductors

Temperature range: Min: -55°C | Max: 150°C

Chip package & pins: SOT (Pins: 3)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

PHD2N60E datasheet size: 76Kb

Download PHD2N60E datasheet: PHD2N60E.PDF