PHD3N40E datasheet

datasheet for PHD3N40E by Philips Semiconductors

Electronic component partname: PHD3N40E

PHD3N40E description: 400 V, power MOS transistor avalanche energy rated

Manufacturer: Philips Semiconductors

Temperature range: Min: -55°C | Max: 150°C

Chip package & pins: SOT (Pins: 3)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

PHD3N40E datasheet size: 76Kb

Download PHD3N40E datasheet: PHD3N40E.PDF