PHB8N50E datasheet

datasheet for PHB8N50E by Philips Semiconductors

Electronic component partname: PHB8N50E

PHB8N50E description: PowerMOS transistor. Avalanche energy rated.

Manufacturer: Philips Semiconductors

Temperature range: Min: -55°C | Max: 150°C

Chip package & pins: SOT404 (Pins: 3)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

PHB8N50E datasheet size: 90Kb

Download PHB8N50E datasheet: PHB8N50E.PDF